Interface structure of graphene on Sic: An ab initio and STM approach

Journal of Physics D: Applied Physics

Volumn 43, Issue 37, 2010, Pages

  Veuillen, J Y ^a   Hiebel, F ^a   Magaud, L ^a   Mallet, P ^a   Varchon, F ^a,b  

^a CNRS   (France)

^b UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO; AB INITIO CALCULATIONS; AB INITIO SIMULATIONS; GRAPHENE LAYERS; HIGH TEMPERATURE TREATMENTS; INSULATING SUBSTRATES; INTERFACE STRUCTURES; SCANNING TUNNELLING MICROSCOPY; SURFACE SCIENCE TECHNIQUES; WELL-ESTABLISHED TECHNIQUES;

CRYSTAL ATOMIC STRUCTURE; ELECTRONIC STRUCTURE; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE; SUBSTRATES; SULFUR COMPOUNDS;

GRAPHENE;

EID: 78249271998     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/37/374008     Document Type: Article

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