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Volumn 95, Issue 22, 2009, Pages

Half integer quantum Hall effect in high mobility single layer epitaxial graphene

(8) Wu, Xiaosong a Hu, Yike a Ruan, Ming a Madiomanana, Nerasoa K a Hankinson, John a Sprinkle, Mike a Berger, Claire a,b De Heer, Walt A a

a GEORGIA INSTITUTE OF TECHNOLOGY (United States)

b LABORATOIRE DE CRISTALLOGRAPHIE (France)

Author keywords

[No Author keywords available]

Indexed keywords

4H SILICON CARBIDE; BERRY'S PHASE; EPITAXIAL GRAPHENE; GRAPHENE LAYERS; GRAPHENES; HIGH MOBILITY; ORDER OF MAGNITUDE; QUANTUM HALL EFFECT; SINGLE LAYER;

GRAPHITE; GYRATORS; HALL EFFECT DEVICES; HALL MOBILITY; MONOLAYERS; QUANTUM THEORY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SILICON OXIDES;

GALVANOMAGNETIC EFFECTS;

EID: 71949112509 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3266524 Document Type: Article

Times cited : (147)

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