Epitaxial graphene on SiC(0001) and : From surface reconstructions to carbon electronics

Journal of Physics Condensed Matter

Volumn 21, Issue 13, 2009, Pages

  Starke, U ^a   Riedl, C ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE-RESOLVED ULTRAVIOLET PHOTOELECTRON SPECTROSCOPIES; ATOMIC RESOLUTION; BASAL PLANES; BRILLOUIN ZONES; EPITAXIAL GRAPHENE; FUTURE APPLICATIONS; GRAPHENE; GRAPHENE GROWTH; GRAPHENE LAYERS; GRAPHITIZATION PROCESS; HIGH RESOLUTION; INTERFACE LAYER; NANOSCALED; NUMBER OF LAYERS; PRACTICAL METHOD; PREPARATION PROCEDURES; SCANNING TUNNELING MICROSCOPY (STM); SPOT INTENSITIES; STM IMAGES; SUPERLATTICE PERIODICITY; THICKNESS ANALYSIS; UV LIGHT; WEAK COUPLINGS;

ELECTRON GAS; ELECTRON SPECTROSCOPY; ELECTRONIC STRUCTURE; ELECTRONS; GRAPHITE; HELIUM; LIGHT; LOW ENERGY ELECTRON DIFFRACTION; PHASE INTERFACES; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; RESTORATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SPECTRUM ANALYSIS; SURFACE RECONSTRUCTION; TWO DIMENSIONAL; TWO DIMENSIONAL ELECTRON GAS; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; ULTRAVIOLET SPECTROSCOPY;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 67649199539     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/21/13/134016     Document Type: Article

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