The SiC(0001)6√3 × 6√3 reconstruction studied with STM and LEED

Surface Science

Volumn 369, Issue 1-3, 1996, Pages 126-136

  Owman, Fredrik ^a   Mårtensson, Per ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Low energy electron diffraction (LEED); Low index single crystal surfaces; Scanning tunneling microscopy; Silicon carbide; Surface relaxation and reconstruction

Indexed keywords

ANNEALING; FOURIER TRANSFORMS; GRAPHITIZATION; HIGH TEMPERATURE EFFECTS; LOW ENERGY ELECTRON DIFFRACTION; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SINGLE CRYSTALS; SURFACE STRUCTURE;

LOW INDEX SINGLE CRYSTAL SURFACES; SURFACE RECONSTRUCTION;

SILICON CARBIDE;

EID: 0030413199     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(96)00919-3     Document Type: Article

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