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Volumn 143, Issue 1-2, 2007, Pages 110-115

Electrons in bilayer graphene

Author keywords

A. Nanostructures; D. Electronic band structure; D. Electronic transport; D. Optical properties

Indexed keywords

BAND STRUCTURE; CHEMICAL BONDS; ELECTRIC FIELDS; ELECTRONS; FIELD EFFECT TRANSISTORS; NANOSTRUCTURES; OPTICAL PROPERTIES;

EID: 34249883916     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2007.03.054     Document Type: Article
Times cited : (205)

References (49)
  • 34
    • 34249880662 scopus 로고    scopus 로고
    • note
    • r = 1.
  • 35
    • 34249865208 scopus 로고    scopus 로고
    • note
    • - 1, 0), where ξ = ± 1 and a is the lattice constant.
  • 40
    • 34249904779 scopus 로고    scopus 로고
    • note
    • L, trigonal warping term causes the Lifshitz transition in the topology of the Fermi line in each valley as explained in Section 4.
  • 45
    • 34249889444 scopus 로고    scopus 로고
    • note
    • At energies below the Lifshitz transition [7], the bilayer spectrum in each of the four Fermi surface pockets is linear, and the integral Berry phase 2 π in bilayer graphene [7,8] is divided into Berry phase π in each of the three side pockets and - π in the central one.
  • 46
    • 34249915669 scopus 로고    scopus 로고
    • note
    • 1, the relation is simply over(Δ, ̃) ≈ | Δ |.
  • 47
    • 34249904004 scopus 로고    scopus 로고
    • note
    • -2. Indeed, trigonal warping should result in a small overlap between the conduction and valence band of ≈2 meV.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.