Scanning Tunneling Microscopy investigation of the graphene/6H-SiC(000over(1, ̄)) (3×3 ) interface

Solid State Communications

Volumn 149, Issue 27-28, 2009, Pages 1157-1160

  Hiebel, F ^a   Mallet, P ^a   Varchon, F ^a   Magaud, L ^a   Veuillen, J Y ^a  

^a CNRS   (France)

Author keywords

A. Surfaces and interfaces; B. Crystal growth; C. Scanning tunneling microscopy

Indexed keywords

A. SURFACES AND INTERFACES; B. CRYSTAL GROWTH; C. SCANNING TUNNELING MICROSCOPY; GRAPHENE; LOW BIAS; ROTATION ANGLES; SCANNING TUNNELING MICROSCOPY (STM); SUBSTRATE SURFACE;

CRYSTAL GROWTH; CRYSTALLIZATION; GRAIN BOUNDARIES; GRAPHITE; SCANNING; SILICON CARBIDE; SUBSTRATES;

SCANNING TUNNELING MICROSCOPY;

EID: 65849130173     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2009.02.047     Document Type: Article

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