Solid-state decomposition of silicon carbide for growing ultra-thin heteroepitaxial graphite films

Journal of Applied Physics

Volumn 92, Issue 5, 2002, Pages 2479-2484

  Charrier, A ^a   Coati, A ^b   Argunova, T ^c   Thibaudau, F ^a   Garreau, Y ^d   Pinchaux, R ^d   Forbeaux, I ^a   Debever, J M ^a   Sauvage Simkin, M ^d   Themlin, J M ^a  

^a CNRS   (France)

^b UNIVERSITY OF PADOVA   (Italy)

^c IOFFE INSTITUTE   (Russian Federation)

^d UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE SIZE; CRYSTALLINE PARAMETERS; ELECTRONIC-GRADE WAFERS; GRAPHENE PLANE; GRAPHITE FILMS; GRAPHITE LAYERS; GRAZING INCIDENCE X-RAY DIFFRACTION; HETEROEPITAXIAL; IN-PLANE DIFFRACTION; LAYER-BY-LAYER GROWTH; ORDERED RING; OUT-OF-PLANE DIFFRACTION; SINGLE-CRYSTALLINE; SOLID-STATE DECOMPOSITION; STARLIKE STRUCTURES; ULTRA-THIN;

CRYSTALLINE MATERIALS; DECOMPOSITION; EPITAXIAL FILMS; EPITAXIAL GROWTH; FILM GROWTH; GRAPHENE; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE; X RAY DIFFRACTION;

GRAPHITE;

EID: 0036735486     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1498962     Document Type: Article

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