Highly ordered graphene for two dimensional electronics

Applied Physics Letters

Volumn 89, Issue 14, 2006, Pages

  Hass, J ^a   Feng, R ^a   Li, T ^a   Li, X ^a   Zong, Z ^a   De Heer, W A ^a   First, P N ^a   Conrad, E H ^a   Jeffrey, C A ^b   Berger, C ^c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b UNIVERSITY OF MISSOURI   (United States)

^c LABORATOIRE DE CRISTALLOGRAPHIE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GRAPHENES; SIC; STRUCTURAL DOMAIN SIZES; SUBSTRATE DISORDERS;

ELECTRONIC EQUIPMENT; FILM GROWTH; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; SUBLIMATION; ULTRAHIGH VACUUM;

OLEFINS;

EID: 33749473677     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2358299     Document Type: Article

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