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Volumn 86, Issue 15, 2001, Pages 3384-3387

Imaging of friedel oscillation patterns of two-dimensionally accumulated electrons at epitaxially grown InAs(111)A surfaces

(4) Kanisawa, K a Butcher, M J a,b Yamaguchi, H a Hirayama, Y a,c

a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories (Japan)

b UNIVERSITY OF NOTTINGHAM (United Kingdom)

c JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRON GAS; ELECTRONIC DENSITY OF STATES; FAST FOURIER TRANSFORMS; FERMI LEVEL; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; OSCILLATIONS; POINT DEFECTS; QUANTUM THEORY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

FRIEDEL OSCILLATIONS; INDIUM ARSENIDE; LOCAL DENSITY OF STATES;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 17744411162 PISSN: 00319007 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevLett.86.3384 Document Type: Article

Times cited : (102)

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