Symmetry of standing waves generated by a point defect in epitaxial graphene

European Physical Journal B

Volumn 69, Issue 3, 2009, Pages 351-355

  Simon, L ^a   Bena, C ^b   Vonau, F ^a   Aubel, D ^a   Nasrallah, H ^a   Habar, M ^a   Peruchetti, J C ^a  

^a UNIVERSITÉ DE HAUTE ALSACE   (France)

^b Centre National de la Recherche Scientifique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GRAPHENE; EXPERIMENTAL MEASUREMENTS; FERMI LIQUID THEORY; GRAPHENE; QUASIPARTICLE ENERGY; SCANNING TUNNELING MICROSCOPY (STM); SILICON CARBIDE SUBSTRATES; STANDING WAVE; T-MATRIX;

ANISOTROPY; DEFECTS; ELASTIC WAVES; FERMI LIQUIDS; POINT DEFECTS; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE; STANDING WAVE METERS; STEREOCHEMISTRY; WAVES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 67651158827     PISSN: 14346028     EISSN: 14346036     Source Type: Journal    
DOI: 10.1140/epjb/e2009-00142-3     Document Type: Article

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