Structural and electronic properties of bilayer epitaxial graphene

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 26, Issue 4, 2008, Pages 938-943

  Rutter, G M ^a   Crain, J N ^b   Guisinger, N P ^b   First, P N ^a   Stroscio, J A ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

(PL) PROPERTIES; BI LAYERS; DIFFERENTIAL CONDUCTANCES; DISPERSION RELATIONS; GRAPHENE; INTERFACE MORPHOLOGIES; LATTICE DEFECTS; SCANNING TUNNELING SPECTROSCOPY (STS); SCATTERING PATTERNS; TOPOGRAPHIC IMAGING;

CIVIL AVIATION; CONSERVATION; ELECTRIC CURRENTS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONIC PROPERTIES; EXCAVATION; FERMI LEVEL; FERMIONS; MAPS; MICROSCOPIC EXAMINATION; OPTICAL PROJECTORS; SCANNING; SCANNING PROBE MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SCATTERING; SILICON CARBIDE; SOIL CONSERVATION; STRUCTURAL PROPERTIES; TUNNELING (EXCAVATION);

CHARGE CARRIERS;

EID: 46449118790     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2944257     Document Type: Article

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