High-temperature graphitization of the 6H-SiC (0001̄) face

Surface Science

Volumn 442, Issue 1, 1999, Pages 9-18

  Forbeaux, I ^a   Themlin, J M ^a   Debever, J M ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL LATTICES; CRYSTALLINE MATERIALS; DIFFRACTION; FERMI LEVEL; GRAPHITE; GRAPHITIZATION; GROWTH (MATERIALS); HIGH TEMPERATURE EFFECTS; LOW ENERGY ELECTRON DIFFRACTION; PHOTOELECTRON SPECTROSCOPY; SURFACE STRUCTURE;

ANGLE RESOLVED INVERSE PHOTOEMISSION SPECTROSCOPY; HIGH TEMPERATURE GRAPHITIZATION; SURFACE ELECTRONIC PHENOMENA;

SILICON CARBIDE;

EID: 0033353970     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00891-2     Document Type: Article

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