Read current instability arising from random telegraph noise in localized storage, multi-level SONOS flash memory

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Gu, S H ^a,b   Li, C W ^b   Wang, Tahui ^a,b   Lu, W P ^a   Chen, K C ^a   Ku, Joseph ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE EQUIPMENT; ELECTRIC CURRENTS; ELECTRON DEVICES; NITRIDES; TELEGRAPH;

CHARGE STORAGE; CYCLING STRESS; MULTI-LEVEL; RANDOM TELEGRAPH NOISE; READ CURRENT; SONOS FLASH MEMORY;

FLASH MEMORY;

EID: 46049121054     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346820     Document Type: Conference Paper

References (6)

1. B. Eitan, G. Cohen, A. Shappir, E. Lusky, A. Givant, M. Janai, I. Bloom, Y. Polansky, O. Dadashey, A. Lavan, R. Sahar, E. Maayan, "4-bit per cell NROM reliability," IEDM Tech. Dig., pp. 539-542, 2005.
2. Y. Polansky, A. Lavan, R. Sahar, O. Dadashev, Y. Betser, G. Cohen, E. Maayan, B. Eitan, T. C. T. Chen, C. H. Chang, C. Y. Liao, C. K. Chen, W. C. Ho, Y. S., W. P. Lu, W. C. Ting, F. L. Ni, Y. H. Joseph Ku, Chih-Yuan Lu, "A 4 bits per cell NROM 1Gb data storage memory," ISSCC Dig. Tech., pp. 34-38, 2006.
3. M. J. Kirton and M. J. Uren, "Noise in solid state microstructure: A new perspective on individual defects, interface states, and low-frequency (1/f) noise," Adv. in Phys., Vol. 38, pp. 367-468, 1989.
4. H. Kurata, K. Otsuga, A. Kotabe, S. Kajiyama, T. Osabe, Y. Sasago, S. Narumi, K. Tokami, S. Kamohara, O. Tsuchiya "The Impact of Random Telegraph Signals on the Scaling of Multilevel Flash Memories," Symp. on VLSI Circuit pp. 125-126., 2006
5. Tahui Wang, W. J. Tasi, S. H. Gu, C. T. Chan, C. C. Yeh, N. K. Zous, T. C. Lu, Sam Pan, C. Y. Lu, "Reliability Models of Data Retention and Read-Disturb in 2-bit Nitride Storage Flash Memory Cells," IEDM Tech. Dig., pp. 169-172, 2003.
6. M. H. Tsai and T. P. Ma, "The Impact of Device Scaling on the Current Fluctuations in MOSFET's," IEEE Trans. on Elec. Dev., Vol. 41, pp. 2061-2068, 1994.