A novel gate-sensing and channel-sensing transient analysis method for real-time monitoring of charge vertical location in sonos-type devices and its applications in reliability studies

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2007, Pages 177-183

  Lue, Hang Ting ^a   Du, Pei Ying ^a   Wang, Szu Yu ^a   Lai, Erh Kun ^a   Hsieh, Kuang Yeu ^a   Liu, Rich ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE DENSITY; CHARGE TRAPPING; GATES (TRANSISTOR); RELIABILITY ANALYSIS; SEMICONDUCTOR STORAGE; TRANSIENT ANALYSIS;

CHANNEL SENSING; DATA RETENTION; TRAPPING DYNAMICS;

SEMICONDUCTOR DEVICES;

EID: 34548801394     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369889     Document Type: Conference Paper

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