Charge trapping memory cell of TANOS (Si-Oxide-SiN-Al2O 3-TaN) structure compatible to conventional NAND flash memory

21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006

Volumn 2006, Issue , 2006, Pages 54-55

  Lee, Chang Hyun ^a   Kang, Changseok ^a   Sim, Jaesung ^a   Lee, Jang Sik ^a   Kim, Juhyung ^a   Shin, Yoocheol ^a   Park, Ki Tae ^a   Jeon, Sanghun ^a   Sel, Jongsun ^a   Jeong, Younseok ^a   Choi, Byeongin ^a   Kim, Viena ^a   Jung, Wonseok ^a   Hyun, Chung Il ^a   Choi, Jungdal ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33751026939     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2006.1629491     Document Type: Conference Paper

References (4)

1. K. Kim et al, VLSI-TSA-TECH., pp. 88-94, 2005.
2. C. H. Lee et al, IEDM Tech. Dig., pp. 613-616, 2003.
3. J. H. Park et al, IEDM Tech. Dig., pp. 873-876, 2004.
4. J. D. Lee et al, IEEE Trans. Devices and Materials Reliability, vol. 4, no. 1, pp.110-116, March 2004.