Highly manufacturable 32Gb multi - Level NAND flash memory with 0.0098 μm2 cell size using TANOS(Si - Oxide - Al2O3 - TaN) cell technology

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Park, Youngwoo ^a   Choi, Jungdal ^a   Kang, Changseok ^a   Lee, Changhyun ^a   Shin, Yuchoel ^a   Choi, Bonghyn ^a   Kim, Juhung ^a   Jeon, Sanghun ^a   Sel, Jongsun ^a   Park, Jintaek ^a   Choi, Kihwan ^a   Yoo, Taehwa ^a   Sim, Jaesung ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; NAND CIRCUITS;

MULTI-LEVEL; NAND FLASH MEMORIES;

FLASH MEMORY;

EID: 46049088349     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346900     Document Type: Conference Paper

References (3)

1. Kinam Kim, Jungdal Choi, "Future Outlook of NAND Flash Technology for 40nm Node and Beyond," IEEE NVSMW, pp. 09-11, 2006
2. Kinam Kim, "Manufactoring technology for sub-50 nm DRAM and NAND Flash memory" (special features) pp. 12-19, Q2 Fabtech, 2006.
3. Yuchoel Shin, et al., "A Novel NAND-type MONOS Memory using 63nm Process Technology for Multi-Gigabit Flash EEPROMs" IEDM Tech. Dig., pp. 337-340, 2005.