SCOPUS 정보 검색 플랫폼

Volumn 47, Issue 4 PART 2, 2008, Pages 2598-2601

Investigation of the random telegraph noise instability in scaled flash memory arrays

(5) Spinelli, Alessandro S a,b,c Monzio Compagnoni, Christian a,b Gusmeroli, Riccardo a,b Ghidotti, Michele a,b Visconti, Angelo d

a POLITECNICO DI MILANO (Italy)

b Italian University Nano Electronics Team IUNET (Italy)

c IFN CNR (Italy)

d STMICROELECTRONICS (Italy)

Author keywords

Electron trapping; Flash memory; Non volatile memory; Random telegraph noise; Threshold voltage instability

Indexed keywords

RANDOM PROCESSES; STATISTICAL METHODS; TELEGRAPH; THRESHOLD VOLTAGE;

CUMULATIVE DISTRIBUTIONS; ELECTRON TRAPPING; EXPONENTIAL TAILS; FEATURE SIZES; FLASH MEMORY ARRAYS; NON-VOLATILE MEMORY; RANDOM TELEGRAPH NOISE; RANDOM TELEGRAPH NOISES; READ OPERATIONS; RELIABILITY PROJECTIONS; SIGNIFICANT IMPACTS; TECHNOLOGY NODES; THRESHOLD VOLTAGE INSTABILITY; THRESHOLD VOLTAGE VARIATIONS; VOLTAGE INSTABILITIES;

FLASH MEMORY;

EID: 54249143582 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.47.2598 Document Type: Article

Times cited : (30)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.