Reliability and processing effects of bandgap-engineered SONOS (BE-SONOS) flash memory and study of the gate-stack scaling capability

IEEE Transactions on Device and Materials Reliability

Volumn 8, Issue 2, 2008, Pages 416-425

  Wang, Szu Yu ^a,b   Lue, Hang Ting ^a   Du, Pei Ying ^a   Liao, Chien Wei ^a   Lai, Erh Kun ^a   Lai, Sheng Chi ^a   Yang, Ling Wu ^a   Yang, Tahone ^a   Chen, Kuang Chao ^a   Gong, Jeng ^b   Hsieh, Kuang Yeu ^a   Liu, Rich ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CYCLING ENDURANCES; DATA RETENTIONS; DIELECTRIC SCALING; FUNDAMENTAL LIMITATIONS; GOOD DATUM; MULTI LAYERS; PROCESSING EFFECTS; PROCESSING METHODS; RELIABILITY PROPERTIES; SCALING CAPABILITIES; SONOS FLASH MEMORIES; TUNNELING BARRIERS; TUNNELING LEAKAGES;

DATA STORAGE EQUIPMENT; ENERGY GAP; OZONE WATER TREATMENT; PROCESSING; RELIABILITY;

FLASH MEMORY;

EID: 64249144984     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2008.922900     Document Type: Article

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