Reliability of barrier engineered charge trapping devices for sub-30nm NAND flash

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Liu, Rich ^a   Lue, Hang Ting ^a   Chen, K C ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER ENGINEERING; CHARGE TRAPPING DEVICES; CT DEVICES; DE-TRAPPING; EDGE EFFECT; HIGH ELECTRIC FIELDS; HIGH-FIELD; HIGH-K DIELECTRIC; METAL GATE; NAND FLASH; NONUNIFORM; RANDOM TELEGRAPH NOISE; STATISTICAL FLUCTUATIONS;

CHARGE TRAPPING; ELECTRIC FIELDS; ELECTRON DEVICES; ELECTRONS; RELIABILITY; TELEGRAPH;

QUALITY ASSURANCE;

EID: 77952415042     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424231     Document Type: Conference Paper

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