Analytical model for the electron-injection statistics during programming of nanoscale NAND Flash memories

IEEE Transactions on Electron Devices

Volumn 55, Issue 11, 2008, Pages 3192-3199

  Compagnoni, Christian Monzio ^a,b   Gusmeroli, Riccardo ^a,b   Spinelli, Alessandro S ^a,c   Visconti, Angelo ^d  

^a POLITECNICO DI MILANO   (Italy)

^b Italian University Nano Electronics Team IUNET   (Italy)

^c CNR   (Italy)

^d Department of Central Research and Development ^*  (Italy)

Author keywords

Electron injection statistics; Flash memories; Fowler Nordheim tunneling; Semiconductor device modeling

Indexed keywords

ATOMS; CELLS; CYTOLOGY; ELECTRIC CURRENTS; ELECTRON TUBE DIODES; ELECTRONS; FLASH MEMORY; NAND CIRCUITS; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS;

ANALYTICAL MODELING; ANALYTICAL MODELS; AVERAGE NUMBERS; CELL SCALING; CELL STATES; CELL THRESHOLD VOLTAGES; ELECTRON CURRENTS; FIELD FEEDBACKS; FOWLER-NORDHEIM TUNNELING; GATE CAPACITANCES; GATE VOLTAGES; INJECTED ELECTRONS; INJECTION PROCESSES; NAND FLASH MEMORIES; NANOSCALE; NUMBER OF ELECTRONS; POISSONIAN; PROGRAM OPERATIONS; SEMICONDUCTOR DEVICE MODELING; TUNNEL OXIDE]; TUNNELING CURRENTS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 56549115798     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2003332     Document Type: Article

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