Anomalous electron storage decrease in MONOS' nitride layers thinner than 4 nm

IEEE Electron Device Letters

Volumn 29, Issue 8, 2008, Pages 920-922

  Ishida, Takeshi ^a   Mine, Toshiyuki ^a   Hisamoto, Dai ^a   Shimamoto, Yasuhiro ^a   Yamada, Renichi ^a  

^a HITACHI LTD   (Japan)

Author keywords

Avalanche injection; Electron trap; Flash memory; Metal oxide nitride oxide silicon (MONOS); nitride; Si3N4; SONOS

Indexed keywords

DATA STORAGE EQUIPMENT; METALS; NONMETALS; SILICON;

AVALANCHE INJECTION; DEVICE SCALING; ELECTRON STORAGE; ELECTRON TRAP; FLASH MEMORY; METAL OXIDES; METAL-OXIDE-NITRIDE-OXIDE-SILICON (MONOS); MONOS MEMORY; NITRIDE; NITRIDE LAYERS; POWER OPERATIONS; SI3N4; SONOS; STORAGE CAPABILITIES; TRANSITION LAYERS;

NITRIDES;

EID: 48649084463     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2001122     Document Type: Article

References (5)

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