Constant charge erasing scheme for Flash memories

IEEE Transactions on Electron Devices

Volumn 49, Issue 4, 2002, Pages 613-618

  Chimenton, Andrea ^a   Pellati, Paolo ^a   Olivo, Piero ^a  

^a UNIVERSITY OF FERRARA   (Italy)

Author keywords

Erasing operations; Flash memories; Integrated circuit reliability; Reliability; Semiconductor memories

Indexed keywords

ELECTRIC CHARGE; ELECTRIC FIELDS; SEMICONDUCTOR STORAGE; THRESHOLD VOLTAGE; VOLTAGE CONTROL;

CONSTANT CHARGE ERASING;

FLASH MEMORY;

EID: 0036540521     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.992870     Document Type: Article

References (12)

1. New programming and erasing schemes for P-channel Flash memory
2. A new write/erase method to improve the read disturb characteristics based on the decay phenomena of stress leakage current for Flash memories
3. 2 films
4. Degradation of thin tunnel gate oxide under constant Fowler-Nordheim current stress for a Flash EEPROM
5. Flash memory reliability
6. A new erasing method for a single-voltage long-endurance Flash memories
7. A 20 MB/s data rate 2.5 V Flash memory with current controlled field erasing for 1 M cycle endurance
8. Automated test equipment for research on nonvolatile memories
9. 2
10. 2 barrier height from the Fowler-Nordheim plot
11. Analysis of erratic bits in Flash memories
12. Erratic erase in ETOX™ Flash memory array