Effects of Si3N4 thickness on the electrical properties of oxide-nitride-oxide tunneling dielectrics

Journal of the Electrochemical Society

Volumn 155, Issue 11, 2008, Pages

  An, Chee Hong ^a   Lee, Myung Soo ^a   Kim, Hyoungsub ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON COMPOUNDS;

SILICON;

EID: 52649106921     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2967721     Document Type: Article

References (16)

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