Random telegraph noise effect on the programmed threshold-voltage distribution of flash memories

IEEE Electron Device Letters

Volumn 30, Issue 9, 2009, Pages 984-986

  Monzio Compagnoni, Christian ^a   Ghidotti, Michele ^a   Lacaita, Andrea L ^a,b   Spinelli, Alessandro S ^a,b   Visconti, Angelo ^c  

^a POLITECNICO DI MILANO   (Italy)

^b IFN CNR   (Italy)

^c R and D Technology Development   (Italy)

Author keywords

Flash memories; Random telegraph noise (RTN); Semiconductor device modeling; Staircase programming

Indexed keywords

EXPONENTIAL TAIL; PROGRAM OPERATION; RANDOM TELEGRAPH NOISE; RANDOM TELEGRAPH NOISE (RTN); READ OPERATION; SEMICONDUCTOR-DEVICE MODELING; STAIRCASE PROGRAMMING; VOLTAGE DISTRIBUTION;

CELL MEMBRANES; STAIRS; TELEGRAPH; THRESHOLD VOLTAGE; VOLTAGE DISTRIBUTION MEASUREMENT; VOLTAGE DIVIDERS;

FLASH MEMORY;

EID: 69949152635     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2026658     Document Type: Article

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