Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices

Journal of Computational Physics

Volumn 229, Issue 12, 2010, Pages 4431-4460

  Chen, Duan ^a   Wei, Guo Wei ^a,b  

^a MICHIGAN STATE UNIVERSITY   (United States)

^b Michigan State University   (United States)

Author keywords

Interface model; Mathematical modeling; MOSFET; Nano electronic device; Poisson Schr dinger equations; Quantum effects; Random dopant

Indexed keywords

COMPUTATIONAL EFFICIENCY; ELECTRONIC STRUCTURE; ELECTROSTATICS; INTERFACES (MATERIALS); MOS DEVICES; NANOTECHNOLOGY; OXIDE SEMICONDUCTORS; POISSON EQUATION; SEMICONDUCTOR DOPING; THERMOELECTRIC EQUIPMENT;

ELECTRONIC.STRUCTURE; INTERFACE MODELING; MATERIAL INTERFACES; MATHEMATICAL MODELING; METALOXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MOSFETS); MODEL AND SIMULATION; NANOELECTRONIC DEVICES; POISSON-SCHRÖDINGE EQUATION; QUANTUM EFFECTS; RANDOM DOPANTS;

MOSFET DEVICES;

EID: 77951621843     PISSN: 00219991     EISSN: 10902716     Source Type: Journal    
DOI: 10.1016/j.jcp.2010.02.002     Document Type: Article

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