Ultrasmall MOSFETs: the importance of the full Coulomb interaction on device characteristics

IEEE Transactions on Electron Devices

Volumn 47, Issue 10, 2000, Pages 1831-1837

  Gross, William J ^a,b   Vasileska, Dragica ^a   Ferry, David K ^a  

^a INTEL CORPORATION   (United States)

^b Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRON SCATTERING; MONTE CARLO METHODS; SEMICONDUCTOR DEVICE MODELS; THREE DIMENSIONAL; THRESHOLD VOLTAGE;

CARRIER DYNAMICS; COULOMB FORCES; COULOMB INTERACTION; ELECTRON-ELECTRON INTERACTIONS;

MOSFET DEVICES;

EID: 0034295786     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.870556     Document Type: Article

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