Quantum-corrected drift-diffusion models for transport in semiconductor devices

Journal of Computational Physics

Volumn 204, Issue 2, 2005, Pages 533-561

  de Falco, Carlo ^a   Gatti, Emilio ^b   Lacaita, Andrea L ^b   Sacco, Riccardo ^b  

^a UNIVERSITY OF MILAN   (Italy)

^b POLITECNICO DI MILANO   (Italy)

Author keywords

Density gradient; Finite element method; Functional iterations; Nanoscale semiconductor devices; Quantum and drift diffusion models; Schr dinger Poisson

Indexed keywords

DIFFUSION; FINITE ELEMENT METHOD; ITERATIVE METHODS; NANOTECHNOLOGY; QUANTUM CHEMISTRY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; STABILITY;

DENSITY GRADIENTS; DIFFUSION SYSTEMS; DRIFT DIFFUSION; DRIFT-DIFFUSION MODEL; FUNCTIONAL ITERATION; NANOSCALE SEMICONDUCTOR DEVICES; QUANTUM AND DRIFT-DIFFUSION MODEL; QUANTUM DIFFUSION; SCHRÖDINGE-POISSON; UNIFIED FRAMEWORK;

ELECTRIC POTENTIAL;

EID: 15944400350     PISSN: 00219991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcp.2004.10.029     Document Type: Article

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