Analysis of fluctuations in semiconductor devices through self-consistent Poisson-schrödinger computations

Journal of Applied Physics

Volumn 96, Issue 4, 2004, Pages 2071-2079

  Andrei, Petru ^a   Mayergoyz, Isaak ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROSTATIC POTENTIAL; FLUCTUATIONS; JACOBIAN MATRIX; NEWTON ITERATIONS; OXIDE THICKNESS; POISSON-SCHRODINGER COMPUTATIONS; TRANSPORT EQUATIONS;

APPROXIMATION THEORY; CARRIER CONCENTRATION; COMPUTER SIMULATION; DOPING (ADDITIVES); EIGENVALUES AND EIGENFUNCTIONS; ELECTRIC POTENTIAL; ITERATIVE METHODS; LINEARIZATION; MONTE CARLO METHODS; MOSFET DEVICES; PERTURBATION TECHNIQUES; QUANTUM THEORY; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES;

SEMICONDUCTOR DEVICES;

EID: 4344717092     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1772886     Document Type: Article

References (32)

1. H. S. Wong and Y. Taur, Tech. Dig. - Int. Electron Devices Meet. 1993, 703.
2. K. Nishinohara, N. Shigyo, and T. Wada, IEEE Trans. Electron Devices 39, 634 (1992).
3. T. Mizuno, J. Okamura, and A. Toriumi, IEEE Trans. Electron Devices 41, 2216 (1994).
4. Y. Taur and T. H. Ning, Fundamentals of Modern VLSI Devices (Cambridge University Press, Cambridge, 1998).
5. I. D. Mayergoyz and P. Andrei, J. Appl. Phys. 90, 3019 (2001).
6. A. Asenov, S. Kaya, and J. H. Davies, IEEE Trans. Electron Devices 49, 112 (2002).
7. A. Asenov, S. Slavcheva, A. R. Brown, J. H. Davies, and S. Saini, IEEE Trans. Electron Devices 48, 722 (2001).
8. P. Andrei and I. D. Mayergoyz, J. Appl. Phys. 94, 7163 (2003).
9. A. Asenov, A. R. Brown, J. H. Davies, S. Kaya, and S. Slavcheva, IEEE Trans. Electron Devices 50, 1837 (2003).
10. A. Wettstein, O. Penzin, E. Lyumkis, and W. Fichtner, Proc. SISPAD, 2003, 91.
11. P. Andrei and I. D. Mayergoyz, J. Appl. Phys. 93, 4646 (2003).
12. I. D. Mayergoyz and P. Andrei, Int. J. High Speed Electron. Syst. 12, 551 (2002).
13. P. Andrei and I. D. Mayergoyz, Solid-State Electron. 47, 2055 (2003).
14. P. Andrei and I. D. Mayergoyz, Solid-State Electron. 48, 133 (2003).
15. F. Stern and W. E. Howard, Phys. Rev. 163, 816 (1967).
16. S. E. Laux and F. Stern, Appl. Phys. Lett. 49, 91 (1986).
17. F. Stern, J. Comput. Phys. 6, 56 (1970).
18. J. Suňé, P. Olivo, and B. Riccó, J. Appl. Phys. 70, 337 (1991).
19. A. Kumar, S. E. Laux, and F. Stern, Phys. Rev. B 42, 5166 (1990).
20. A. Trellakis, A. T. Galick, A. Pacelli, and U. Ravaioli, J. Appl. Phys. 81, 7880 (1997).
21. A. Pacelli, IEEE Trans. Electron Devices 44, 1169 (1997).
22. S. Selberherr, Analysis and Simulation of Semiconductor Devices (Springer, Berlin, 1984).
23. A. Abramo, A. Cardin, L. Selmi, and E. Sangiorgi, IEEE Trans. Electron Devices 47, 1858 (2000).
24. A. Trellakis, A. T. Galick, and U. Ravaioli, Solid-State Electron. 41, 771 (1997).
25. B. Winstead and U. Ravaioli, IEEE Trans. Electron Devices 50, 440 (2003).
26. S. Yamakawa, H. Ueno, K. Taniguchi, C. Hamaguchi, K. Miyatsuji, K. Masaki, and U. Ravaioli, J. Appl. Phys. 79, 911 (1996).
27. T. Yoshinobu, A. Iwamoto, and H. Iwasaki, J. Appl. Phys. 33, 383 (1994).
28. http://www.netlib.org/lapack.
29. A. Pirovano, A. L. Lacaita, and A. S. Spinelli, IEEE Trans. Electron Devices 49, 25 (2002).
30. Y. Taur, C. H. Wann, and D. J. Frank, Tech. Dig. - Int. Electron Devices Meet. 1998, 789.
31. D. B. M. Klaassen, Solid-State Electron. 35, 953 (1992).
32. M. N. Darwish, J. L. Lentz, M. R. Pinto, P. M. Zeitzoff, J. Krutsick, and H. H. Vuong, IEEE Trans. Electron Devices 44, 1529 (1997).