Impact of geometrical and electrical parameters on speed performance characteristics in ultimate double-gate metal-oxide-semiconductor field-effect transistors

Japanese Journal of Applied Physics

Volumn 47, Issue 5 PART 1, 2008, Pages 3390-3395

  Loussier, Xavier ^a   Munteanu, Daniela ^a   Autran, Jean Luc ^a,b   Tintori, Olivier ^a  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b INSTITUT UNIVERSITAIRE DE FRANCE   (France)

Author keywords

CMOS inverter; Double gate MOSFET; Inverter delay; Power consumption

Indexed keywords

DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; ELECTRIC POWER UTILIZATION; FIELD EFFECT TRANSISTORS; METALLIC FILMS; MOS DEVICES; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON; SPEED; TRANSISTORS; ULTRATHIN FILMS;

AND GATES; CHANNEL DOPING; CHANNEL LENGTHS; CMOS INVERTER; COMPLEMENTARY; DEVICE ARCHITECTURES; DEVICE PARAMETERS; DOPED SILICONS; DOUBLE-GATE MOSFET; ELECTRICAL; ELECTRICAL PARAMETERS; GATE CAPACITANCES; GATE LENGTHS; GATE METALS; GATE STRUCTURES; IN CHANNELS; INVERTER DELAY; INVERTER DELAYS; MOS-FET; OPTIMIZING; POWER CONSUMPTION; POWER CONSUMPTIONS; SILICON FILM THICKNESSES; SIMULATION ANALYSIS; SIMULATION RESULTS; SPEED PERFORMANCES; STATE CURRENTS; SUPPLY VOLTAGES; SWITCHING SPEEDS;

MOSFET DEVICES;

EID: 55049128241     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.3390     Document Type: Article

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