Suppression of short channel effect in triangular parallel wire channel MOSFETs

IEICE Transactions on Electronics

Volumn E85-C, Issue 5, 2002, Pages 1073-1078

  Saito, Toshiki ^a   Saraya, Takuya ^a   Inukai, Takashi ^a   Majima, Hideaki ^a   Nagumo, Toshiharu ^a   Hiramoto, Toshiro ^a,b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

DIBL; Short channel effect; SOI MOSFET; Subthreshold factor; Triangular wire

Indexed keywords

ANISOTROPY; COMPUTER SIMULATION; DENSITY (OPTICAL); ELECTRIC FIELD EFFECTS; FABRICATION; LITHOGRAPHY; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; THREE DIMENSIONAL;

CURRENT DRIVE; DRAIN INDUCED BARRIER LOWERING; GATE OXIDE; SHORT CHANNEL EFFECTS; SUBTHRESHOLD FACTOR;

MOSFET DEVICES;

EID: 0036579804     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (15)

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