Effect of interface roughness on silicon-on-insulator-metal-semiconductor field-effect transistor mobility and the device low-power high-frequency operation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 4, 2005, Pages 1782-1784

  Khan, T ^a   Vasileska, D ^a   Thornton, T J ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMANN TRANSPORT EQUATION (BTE); INTERFACE ROUGHNESS;

BOUNDARY CONDITIONS; FIELD EFFECT TRANSISTORS; FREQUENCIES; MATHEMATICAL MODELS; MONTE CARLO METHODS; SCATTERING; SURFACE ROUGHNESS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 31144437501     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1949220     Document Type: Article

References (10)

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8. M. Lundstrom, Fundamentals of Carrier Transport (Cambridge University, Cambridge England, 2000).
9. T. J. Thornton (private communication).
10. D. Esseni, M. Mastrapasqua, G. K. Celler, C. Fiegna, L. Selmi, and E. Sangiorgi, IEEE Trans. Electron Devices 48, 2842 (2001).