Boundary treatments in non-equilibrium Green's function (NEGF) methods for quantum transport in nano-MOSFETs

Journal of Computational Physics

Volumn 227, Issue 13, 2008, Pages 6553-6573

  Jiang, Haiyan ^a   Shao, Sihong ^a   Cai, Wei ^b   Zhang, Pingwen ^a  

^a School of Mathematical Sciences   (China)

^b UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE   (United States)

Author keywords

MOSFET; Nano devices; Non equilibrium Green's function (NEGF); Quantum transport; Schr dinger equation; Self energy

Indexed keywords

MOSFET DEVICES; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS;

BOUNDARY TREATMENT; MOS-FET; MOSFETS; NANO-DEVICES; NON-EQUILIBRIUM GREEN FUNCTION; NONEQUILIBRIUM GREENS FUNCTION (NEGF); QUANTUM DEVICE; QUANTUM TRANSPORT; SCHRÖDINGE EQUATION; SELF ENERGY;

NUMERICAL METHODS;

EID: 44149091635     PISSN: 00219991     EISSN: 10902716     Source Type: Journal    
DOI: 10.1016/j.jcp.2008.03.018     Document Type: Article

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