Precise modeling framework for short-channel double-gate and gate-all-around MOSFETs

IEEE Transactions on Electron Devices

Volumn 55, Issue 10, 2008, Pages 2678-2686

  Boørli, Håkon ^a,b   Kolberg, Sigbjørn ^a,b,c   Fjeldly, Tor A ^a,b,d   Iñíguez, Benjamin ^e  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^b UNIVERSITY OF OSLO   (Norway)

^c DNV GL   (Norway)

^d UNIVERSITY OF OSLO   (Norway)

^e UNIVERSITAT ROVIRA I VIRGILI   (Spain)

Author keywords

Conformal mapping; Device modeling; Double gate (DG) devices; Gate all around (GAA) devices; Nanoscale MOSFETs

Indexed keywords

BOUNDARY CONDITIONS; BOUNDARY VALUE PROBLEMS; COMPUTER SIMULATION; CONFORMAL MAPPING; DRAIN CURRENT; GALERKIN METHODS; GALLIUM ALLOYS; MATHEMATICAL TRANSFORMATIONS; POISSON EQUATION;

DEVICE MODELING; DOUBLE-GATE (DG) DEVICES; GATE-ALL-AROUND (GAA) DEVICES; NANOSCALE MOSFETS;

MOSFET DEVICES;

EID: 53649084961     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2003221     Document Type: Article

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