Three-dimensional simulations of ultrasmall metal-oxide-semiconductor field-effect transistors: The role of the discrete impurities on the device terminal characteristics

Journal of Applied Physics

Volumn 91, Issue 6, 2002, Pages 3737-3740

  Gross, W J ^a   Vasileska, D ^b   Ferry, D K ^b  

^a INTEL CORPORATION   (United States)

^b Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE ACTIVE REGION; DOPANT ATOMS; DRIFT VELOCITIES; ELECTRON DRIFT VELOCITY; IMPURITY ATOMS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; THREE DIMENSIONAL SIMULATIONS; ULTRA-SMALL;

IMPURITIES; MOSFET DEVICES; THRESHOLD VOLTAGE;

ATOMS;

EID: 0037087352     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1453510     Document Type: Article

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