The impact of random dopant aggregation in source and drain on the performance of ballistic DG Nano-MOSFETs: A NEGF study

IEEE Transactions on Nanotechnology

Volumn 6, Issue 4, 2007, Pages 438-444

  Martinez, Antonio ^b   Barker, John R ^b   Svizhenko, Alexei ^c,d   Anantram, M P ^e   Asenov, Asen ^a,b  

^a IEEE

^b UNIVERSITY OF GLASGOW   (United Kingdom)

^c STANFORD UNIVERSITY   (United States)

^d Silvaco Data Systems Inc   (United States)

^e UNIVERSITY OF WATERLOO   (Canada)

Author keywords

Clustering of dopants; DG MOSFET; Nonequilibrium green functions

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); DRAIN CURRENT; ELECTROMAGNETIC WAVE SCATTERING; GREEN'S FUNCTION; MATHEMATICAL MODELS;

CLUSTERING OF DOPANTS; IMPURITY SCATTERING; NONEQUILIBRIUM GREEN FUNCTIONS;

MOSFET DEVICES;

EID: 34547369064     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2007.899638     Document Type: Article

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