Modeling of FinFET: 3D MC simulation using FMM and unintentional doping effects on device operation

Journal of Computational Electronics

Volumn 3, Issue 3-4, 2004, Pages 337-340

  Khan, Hasanur R ^a   Vasileska, Dragica ^a   Ahmed, S S ^a   Ringhofer, C ^b   Heitzinger, Clemens ^b  

^a Arizona State University   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

3D Monte Carlo; FinFET; FMM; Unintentional doping

Indexed keywords

EID: 24944534607     PISSN: 15698025     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10825-004-7072-7     Document Type: Article

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