Hopping transport in multiple-dot silicon single electron MOSFET

Solid-State Electronics

Volumn 42, Issue 7-8, 1998, Pages 1425-1428

  Ishikuro, Hiroki ^a   Hiramoto, Toshiro ^a,b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; NUMERICAL ANALYSIS; PHONONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS;

MULTIPLE-DOT SILICON SINGLE ELECTRON;

MOSFET DEVICES;

EID: 0032116554     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00042-2     Document Type: Article

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