Local anodic oxidation by atomic force microscopy for nano-Raman strain measurements on silicon-germanium thin films

Thin Solid Films

Volumn 518, Issue 12, 2010, Pages 3267-3272

  Kolanek, Krzysztof ^a,b   Hermann, Peter ^a,c   Dudek, Piotr T ^d   Gotszalk, Teodor ^e   Chumakov, Dmytro ^a   Weisheit, Martin ^a   Hecker, Michael ^a   Zschech, Ehrenfried ^a  

^a GLOBALFOUNDRIES   (Germany)

^b BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^c Fraunhofer Center Nanoelectronic Technologies   (Germany)

^d IHP   (Germany)

^e WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Local anodic oxidation; Raman spectroscopy; Silicon germanium; Tip enhanced Raman scattering

Indexed keywords

ANISOTROPIC WET ETCHING; ENHANCED RAMAN SCATTERING; LOCAL ANODIC OXIDATION; LOCAL STRAINS; PRECISE CONTROL; RAMAN MEASUREMENTS; SILICON GERMANIUM; SILICON SUBSTRATES; STRAIN TESTS; STRAINED FILMS;

ATOMIC FORCE MICROSCOPY; CALIBRATION; ETCHING; GERMANIUM; NANOLITHOGRAPHY; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; STRAIN GAGES; STRAIN MEASUREMENT;

ANODIC OXIDATION;

EID: 77649215220     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.12.104     Document Type: Article

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