메뉴 건너뛰기




Volumn 79, Issue 11, 1996, Pages 8145-8165

Stresses and strains in lattice-mismatched stripes, quantum wires, quantum dots, and substrates in Si technology

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000806531     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362678     Document Type: Review
Times cited : (113)

References (124)
  • 12
    • 84907698690 scopus 로고
    • edited by J. Borel, P. Gentil, J. P. Noblanc, A. Nouailhat and M. Verdone Editions Frontiers, Paris
    • I. De Wolf, H. E. Maes, and K. Yallup, in Proceedings of ESSDERC93, edited by J. Borel, P. Gentil, J. P. Noblanc, A. Nouailhat and M. Verdone (Editions Frontiers, Paris, 1993), pp. 565-568.
    • (1993) Proceedings of ESSDERC93 , pp. 565-568
    • De Wolf, I.1    Maes, H.E.2    Yallup, K.3
  • 13
    • 85033018216 scopus 로고    scopus 로고
    • unpublished work
    • I. De Wolf (unpublished work).
    • De Wolf, I.1
  • 34
    • 0001283492 scopus 로고
    • J. Vanhellemont, S. Amelinckx, and C. Claeys, J. Appl. Phys. 61, 2170 (1987); 61, 2176 (1987).
    • (1987) J. Appl. Phys. , vol.61 , pp. 2176
  • 73
    • 85033011466 scopus 로고    scopus 로고
    • note
    • Wafer covered by a stressed film is curved and some stress is produced in the substrate on this account. As the wafer thickness is large and curvature is small, this stress is small in cases being considered here and is neglected.
  • 84
    • 85033026111 scopus 로고    scopus 로고
    • note
    • If the stripe is under tensile stress, e.g., GaAs/Si or nitride film on silicon, its edges move inward in mechanisms 1 and 2 and bend upward in mechanism 3. The central portion now bends downward, making it concave.
  • 100
    • 6244289985 scopus 로고
    • edited by M. Scott, Y. Akasaka, and R. Reif The Electrochemical Society, Pennington, NJ
    • Y. Inoue, T. Nishimura, and Y. Akasaka, in Advanced Materials for ULSI, edited by M. Scott, Y. Akasaka, and R. Reif (The Electrochemical Society, Pennington, NJ, 1988), pp. 233-239.
    • (1988) Advanced Materials for ULSI , pp. 233-239
    • Inoue, Y.1    Nishimura, T.2    Akasaka, Y.3
  • 101
    • 0025154729 scopus 로고
    • Berlin The Electrochemical Society, Pennington, NJ
    • E. Anastassakis, in Proceedings of the Sat. Symposium ESSDERC 89, Berlin (The Electrochemical Society, Pennington, NJ, 1990), Vol. 90-11, pp. 298-326.
    • (1990) Proceedings of the Sat. Symposium ESSDERC 89 , vol.90 , Issue.11 , pp. 298-326
    • Anastassakis, E.1
  • 103
    • 0001459162 scopus 로고
    • Light Scattering in Semiconductor Structures and Superlattices, edited by D. J. Lockwood and J. F. Young Plenum, New York
    • E. Anastassakis, in Light Scattering in Semiconductor Structures and Superlattices, edited by D. J. Lockwood and J. F. Young (Plenum, New York, 1990), NATO ASI Series B, Vol. 273, pp. 173-196.
    • (1990) NATO ASI Series B , vol.273 , pp. 173-196
    • Anastassakis, E.1
  • 104
    • 85033033439 scopus 로고    scopus 로고
    • note
    • Values of deformation potentials for Ge are not given in Ref. 101. The values given in the table are obtained by keeping the difference between the Ge and Si values the same as in the values reported in Ref. 100. Since the Ge concentration is only 14%, the values of stress determined from Raman measurements are not sensitive to the deformation potential values for Ge (Ref. 20).
  • 107
    • 6244223704 scopus 로고
    • Microscopy of Semiconducting Materials
    • edited by A. G. Cullis IOP, Bristol
    • E. Bugiel, P. Zaumseil, B. Dietrich, and H. J. Osten, Microscopy of Semiconducting Materials, edited by A. G. Cullis (IOP, Bristol, 1993), Conf. Series, Vol. 134, pp. 333-336.
    • (1993) Conf. Series , vol.134 , pp. 333-336
    • Bugiel, E.1    Zaumseil, P.2    Dietrich, B.3    Osten, H.J.4
  • 115
    • 3242866777 scopus 로고    scopus 로고
    • Gadest 95, Proceedings of Gettering and Defect Engineering in Semiconductor Technology Conference, edited by H. Richter, M. Kittler, and C. Claeys, SCITEC, Switzerland
    • B. Dietrich, E. Bugiel, H. Frankenfeldt, Y. S. Tang, C. M. Sotomayor Torres, H.-P. Zeindl, and A. Wolff, in Gadest 95, Proceedings of Gettering and Defect Engineering in Semiconductor Technology Conference, edited by H. Richter, M. Kittler, and C. Claeys, "Solid State Phenomena" (SCITEC, Switzerland, 1996), Vol. 47-48, pp. 535-540.
    • (1996) Solid State Phenomena , vol.47-48 , pp. 535-540
    • Dietrich, B.1    Bugiel, E.2    Frankenfeldt, H.3    Tang, Y.S.4    Sotomayor Torres, C.M.5    Zeindl, H.-P.6    Wolff, A.7
  • 124
    • 84907694518 scopus 로고
    • edited by C. Hill and P. Ashburn Editions Frontieres, Paris
    • D. Rohan, D. Doyle, and M. O'Neill, in Proceedings ESSDERC 94, edited by C. Hill and P. Ashburn (Editions Frontieres, Paris, 1994), pp. 207-210.
    • (1994) Proceedings ESSDERC 94 , pp. 207-210
    • Rohan, D.1    Doyle, D.2    O'Neill, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.