X-ray crystal truncation rod scattering analysis of reactive ion etched silicon

Journal of Applied Physics

Volumn 84, Issue 10, 1998, Pages 5482-5486

  Isomae, Seiichi ^a   Ohkura, Makoto ^a   Maki, Michiyoshi ^a,b   Matsuda, Yasushi ^a  

^a HITACHI LTD   (Japan)

^b NONE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3643053464     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368311     Document Type: Article

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