Aperture based Raman spectroscopy on SiGe film structures with high spatial resolution

Journal of Raman Spectroscopy

Volumn 39, Issue 4, 2008, Pages 435-438

  Mai, A ^a   Zhu, L ^b   Hecker, M ^c   Rinderknecht, J ^c   Georgi, C ^d   Ritz, Y ^c   Zschech, E ^c  

^a IHP   (Germany)

^b ETH ZURICH   (Switzerland)

^c IBM MICROELECTRONICS   (United States)

^d UNIVERSITY OF MUNICH   (Germany)

Author keywords

Aperture; Raman spectroscopy; Silicon germanium; Strain

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIFFRACTION; GERMANIUM; LASER BEAMS; SI-GE ALLOYS; SILICON;

APERTURE; DIFFRACTION LIMITS; ETCHED TUNGSTEN TIP; FILM STRUCTURE; HIGH SPATIAL RESOLUTION; LINES STRUCTURES; METALLIC APERTURES; SILICON GERMANIUM FILMS; SILICON GERMANIUMS (SIGE); STRAIN RESOLUTION;

RAMAN SPECTROSCOPY;

EID: 51549109906     PISSN: 03770486     EISSN: 10974555     Source Type: Journal    
DOI: 10.1002/jrs.1852     Document Type: Article

References (20)

1. Krivokapic Z. Solid State Tech. 2004; 47: 7.
2. Ganesan S, Maradudin AA, Oitmaa J. Ann. Phys. 1970; 56: 556.
3. Burstein E, Anastassakis E, Pinczuk A. Solid State Commun. 1970; 8: 133.
4. Synge EH. Philos. Mag. 1928; 6: 356.
5. Pohl DW, Denk W, Lanz M. Appl. Phys. Lett. 1984; 44: 651.
6. Lewis A, Isaacson M, Harootunian A, Muray A. Ultramicroscopy 1984; 13: 227.
7. Betzig E, Trautman JK. Science 1992; 257: 189.
8. Noell W, Abraham M, Mayr K, Ruf A, Barenz J, Hollricher O, Marti O, Guthner P. Appl. Phys. Lett. 1997; 70: 1236.
9. Hecht B, Sick B, Wild UP, Decken V, Zenobi R, Martin OJF, Pohl DW. J. Chem. Phys. 2000; 112: 7761.
10. Webster S, Batchelder DN, Smith DA. Appl. Phys. Lett. 1998; 72: 1478.
11. Ren B, Picardi G. Rev. Sci. Instrum. 2004; 75: 4.
12. Zhu L, Atesang J, Dudek P, Hecker M, Rinderknecht J, Ritz Y, Geisler H, Herr U, Geer R, Zschech E. Mater. Sci. (Poland) 2007; 25: 19.
13. Hecker M, Zhu L, Georgi C, Zienert I, Rinderknecht J, Geisler H, Zschech E. Proc. Conf. Frontiers of Characterization and Metrology for Nanoelectronics, Gaithersburg, 2007; 931: 435.
14. Zhu L, Georgi C, Hecker M, Rinderknecht J, Mai A, Ritz Y, Zschech E. J. Appl. Phys. 2007; 101: 104305.
15. Fano U. Phys. Rev. 1961; 124: 1866.
16. Novotny L, Stranick SJ. Annu. Rev. Phys. Chem. 2006; 57: 303.
17. Georgi C, Hecker M, Zschech E. Appl. Phys. Lett. 2007; 90: 171102.
18. Jain SC, Dietrich B, Richter H, Atkinson A, Harker AH. Phys. Rev. 1995; 52: 6247.
19. Bonera E, Fanciulli M, Batchelder DN. J. Appl. Phys. 2003; 94: 2729.
20. Frey HG, Keilmann F, Kriele A, Guckenberger R. Appl. Phys. Lett. 2002; 81: 5030.