Submicrometer transmission mask fabricated by low-temperature SF6/O2 reactive ion etching and focused ion beam

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 6, 1998, Pages 2982-2985

  Sheng, H Y ^a   Fujita, D ^a   Ohgi, T ^a   Okamoto, H ^a   Nejoh, H ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0011712764     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

1. C. G. Smith, Rep. Prog. Phys. 59, 235 (1996).
2. W. M. Tolls, Nanotechnology 7, 59 (1996).
3. H. J. Mamim, P. H. Guethner, and D. Rugar, Phys. Rev. Lett. 65, 2418 (1990).
4. D. Fujita, Q. Jiang, and H. Nejoh, J. Vac. Sci. Technol. B 14, 3413 (1996).
5. K. Ono, H. Shimada, S. Kobayashi, and Y. Ootuka, Jpn. J. Appl. Phys., Part 1 35, 2369 (1996).
6. D. A. Darbyshire, C. W. Pitt, and A. A. Stride, J. Vac. Sci. Technol. B 5, 575 (1987).
7. C. P. D'Emic, K. K. Chan, and J. Blum, J. Vac. Sci. Technol. B 10, 1105 (1992).
8. M. Esashi, M. Takinami, Y. Wakabayashi, and K. Minami, J. Micromech. Microeng. 5, 5 (1995).
9. I. W. Rangelow and H. Loschner, J. Vac. Sci. Technol. B 13, 2394 (1995).