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Volumn 93, Issue 2, 2001, Pages 138-147

The effect of isopropyl alcohol on etching rate and roughness of (100) Si surface etched in KOH and TMAH solutions

Author keywords

Silicon anisotropic etching; Surface adsorption; Surface roughness

Indexed keywords

ADSORPTION; ALCOHOLS; COMPOSITION EFFECTS; CRYSTALLOGRAPHY; ETCHING; IONS; MORPHOLOGY; SILICON WAFERS; SOLUTIONS; SURFACE ROUGHNESS;

EID: 0035975568     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(01)00648-3     Document Type: Article
Times cited : (214)

References (15)
  • 1
    • 0028693832 scopus 로고
    • Anisotropic etching of silicon crystals in KOH solution. Part II. Theoretical two-dimensional etched shapes: Discussion of the adequation of the dissolution slowness surface
    • (1994) J. Mater. Sci. , vol.29 , pp. 6354-6378
    • Tellier, C.R.1    Brahim-Bounab, A.2
  • 9
    • 0034247280 scopus 로고    scopus 로고
    • Silicon anisotropic etching in alkaline solutions III: On the possibility of spatial structures forming in the course of Si(1 0 0) anisotropic etching in KOH and KOH + IPA solutions
    • (2000) Sens. Actuat. , vol.84 A , pp. 116-125
    • Zubel, I.1
  • 15
    • 0032186826 scopus 로고    scopus 로고
    • Silicon anisotropic etching of crystalline silicon in alkaline solutions II: On the influence of anisotropy on the smoothness of etched surfaces
    • (1997) Sens. Actuat. , vol.70 A , pp. 260-268
    • Zubel, I.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.