Nanoscale patterning of Si/SiGe heterostructures by electron-beam lithography and selective wet-chemical etching

Semiconductor Science and Technology

Volumn 15, Issue 8, 2000, Pages 862-867

  Wieser, U ^a   Iamundo, D ^a   Kunze, U ^a   Hackbarth, T ^b   Konig U ^b  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM COMPOUNDS; ANISOTROPY; CRYSTAL ORIENTATION; ELECTRON BEAM LITHOGRAPHY; ENERGY GAP; EPITAXIAL GROWTH; ETCHING; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

SILICON GERMANIDE; TETRAMETHYL AMMONIUM HYDROXIDE; WET-CHEMICAL ETCHING;

HETEROJUNCTIONS;

EID: 0034251491     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/8/313     Document Type: Article

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