Raman intensity enhancement in silicon-on-insulator substrates by laser deflection at atomic force microscopy tips and particles

Applied Physics Letters

Volumn 90, Issue 17, 2007, Pages

  Georgi, Carsten ^a   Hecker, Michael ^a   Zschech, Ehrenfried ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BACKSCATTERING; DEFLECTION (STRUCTURES); DIELECTRIC MATERIALS; RAMAN SCATTERING; SILICON;

EXCITING LASERS; FILM SIGNALS; INCIDENT ANGLE; LASER DEFLECTION;

SILICON ON INSULATOR TECHNOLOGY;

EID: 34248551186     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2730576     Document Type: Article

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