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Journal of Applied Physics

Volumn 106, Issue 5, 2009, Pages

Self-heating and trapping effects in AlGaN/GaN heterojunction field-effect transistors

(5) Saidi, I a Gassoumi, M a Maaref, H a Mejri, H a,b Gaquire C c

a FACULTÉ DES SCIENCES DE MONASTIR (Tunisia)

b Unit de Recherche de Math matiques Appliqúes et Physique Math matiques (Tunisia)

c INSTITUT D ELECTRONIQUE (France)

Author keywords

[No Author keywords available]

Indexed keywords

AL COMPOSITION; ALGAN/GAN HEMTS; ALGAN/GAN HETEROJUNCTION; ALGAN/GAN HETEROSTRUCTURES; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; BAND EDGE; BEFORE AND AFTER; DEVICE MODELS; DIRECT-CURRENT; DOPING CONCENTRATION; DRAIN BIAS; EFFECTS OF TEMPERATURE; ELECTRON BANDS; ELECTRON TRANSPORT; HETERO INTERFACES; INDUCED POLARIZATION; POWER DISSIPATION; SELF-HEATING; SIC SUBSTRATES; TEMPERATURE RISE; TRAPPING EFFECTS;

DRAIN CURRENT; ELECTRON GAS; ELECTRON MOBILITY; ELECTRONS; FIELD EFFECT TRANSISTORS; GALLIUM; GALLIUM NITRIDE; HEATING; HETEROJUNCTIONS; PASSIVATION; SILICON CARBIDE; TWO DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 70349334601 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3202317 Document Type: Article

Times cited : (25)

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