Designing two-dimensional electron gas in AlGaN/InGaN/GaN heterostructures through the incorporated InGaN layer

Optical Materials

Volumn 23, Issue 1-2, 2003, Pages 207-210

  Chu, R M ^a   Zheng, Y D ^a   Zhou, Y G ^a   Gu, S L ^a   Shen, B ^a   Zhang, R ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON GAS; GALLIUM NITRIDE; HETEROJUNCTIONS; POLARIZATION; SEMICONDUCTING INDIUM COMPOUNDS;

QUANTUM CONFINEMENT;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0037672782     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-3467(03)00085-5     Document Type: Conference Paper

References (10)

1. Ambacher O., Smart J., Shealy J.R., Weimann N.G., Chu K., Murphy M., Schaff W.J., Eastman L.F. J. Appl. Phys. 85:1999;3222.
2. Chu R.M., Zhou Y.G., Zheng Y.D., Han P., Shen B., Gu S.L. Appl. Phys. Lett. 79:2001;2270.
3. Simin G., Hu X.H., Taraku A., Zhang J.P., Koudymov A., Saygi S., Yang J.W., Khan A., Shur M.S., Gaska R. Jpn. J. Appl. Phys. 40:2001;L1142.
4. Fu Y., Wang T.H., Willander M. J. Appl. Phys. 89:2001;1759.
5. Ando T., Fowler A.B., Stern F. Rev. Mod. Phys. 54:1982;437.
6. Hsing C.T., Kennedy D.P., Sutherland A.D., van Vliet K.M. Phys. Stat. Sol. (a). 56:1979;129.
7. Martin G., Botchkarev A., Rockett A., Morkoç H. Appl. Phys. Lett. 68:1996;2541.
8. Monemar B., Pozina G. Progr. Quantum Electron. 24:2000;239.
9. Morkoç H., Cingolani R., Gil B. Solid-State Electron. 43:1999;1753.
10. Pearton S.J., Zolper J.C., Shul R.J., Ren F. J. Appl. Phys. 86:1999;1.