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Volumn 39, Issue 10, 2008, Pages 1181-1188

Thermal model for dc characteristics of algan/gan hemts including self-heating effect and non-linear polarization

Author keywords

2 DEG; AlmGa1 mN GaN; Analytical thermal model; HEMT; Non linear polarization; Power dissipation; Self heating

Indexed keywords

2-DEG; ALMGA1-MN/GAN; ALGAN/GAN; ANALYTICAL THERMAL MODEL; DC CHARACTERISTICS; HEMT; NON-LINEAR POLARIZATION; POWER DISSIPATION; SELF-HEATING; SELF-HEATING EFFECT; THERMAL MODELLING;

EID: 49849090240     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.01.043     Document Type: Article
Times cited : (68)

References (28)
  • 1
    • 33847673516 scopus 로고    scopus 로고
    • Electrothermal Monte Carlo simulation of submicrometer Si/SiGe MODFETs
    • Sadi T., Kelsall R.W., and Pilgrim N.J. Electrothermal Monte Carlo simulation of submicrometer Si/SiGe MODFETs. IEEE Trans. Electron Devices 54 (2007) 332-339
    • (2007) IEEE Trans. Electron Devices , vol.54 , pp. 332-339
    • Sadi, T.1    Kelsall, R.W.2    Pilgrim, N.J.3
  • 2
    • 0035573237 scopus 로고    scopus 로고
    • J. Kuzmik, P. Javorka, A. Alam, M. Marso, M. Heuken, P. Kordos, in: EDMO 2001: International Symposium on Electron Devices for Microwave and Optoelectronic Applications, IEEE, New Jersey, 2001, pp. 21-26.
    • J. Kuzmik, P. Javorka, A. Alam, M. Marso, M. Heuken, P. Kordos, in: EDMO 2001: International Symposium on Electron Devices for Microwave and Optoelectronic Applications, IEEE, New Jersey, 2001, pp. 21-26.
  • 3
    • 34247325053 scopus 로고    scopus 로고
    • Electrothermal Monte Carlo simulation of submicron wurtzite GaN/AlGaN HEMTs
    • Sadi T., Kelsall R.W., and Pilgrim N.J. Electrothermal Monte Carlo simulation of submicron wurtzite GaN/AlGaN HEMTs. J. Comput. Electron. 6 (2007) 35-39
    • (2007) J. Comput. Electron. , vol.6 , pp. 35-39
    • Sadi, T.1    Kelsall, R.W.2    Pilgrim, N.J.3
  • 4
    • 0041385878 scopus 로고    scopus 로고
    • Thermal modeling and measurement of GaN-based HFET devices
    • Park J., Shin M.W., and Lee C.C. Thermal modeling and measurement of GaN-based HFET devices. IEEE Electron Device Lett. 24 (2003) 424-426
    • (2003) IEEE Electron Device Lett. , vol.24 , pp. 424-426
    • Park, J.1    Shin, M.W.2    Lee, C.C.3
  • 11
    • 0034318737 scopus 로고    scopus 로고
    • AlGaN/GaN heterostructure field effect transistor model including thermal effects
    • Albrecht J.D., Ruden P.P., Binari S.C., and Ancona M.G. AlGaN/GaN heterostructure field effect transistor model including thermal effects. IEEE Trans. Electron Devices 47 (2000) 2031-2036
    • (2000) IEEE Trans. Electron Devices , vol.47 , pp. 2031-2036
    • Albrecht, J.D.1    Ruden, P.P.2    Binari, S.C.3    Ancona, M.G.4
  • 14
    • 0042196271 scopus 로고    scopus 로고
    • Parasitic resistance and polarization dependent polynomial based non-linear analytical charge-control model for AlGaN/GaN MODFET for microwave frequency applications
    • Korwal M., Haldar S., Gupta M., and Gupta R.S. Parasitic resistance and polarization dependent polynomial based non-linear analytical charge-control model for AlGaN/GaN MODFET for microwave frequency applications. Microwave Opt. Technol. Lett. 38 (2003) 371-378
    • (2003) Microwave Opt. Technol. Lett. , vol.38 , pp. 371-378
    • Korwal, M.1    Haldar, S.2    Gupta, M.3    Gupta, R.S.4
  • 15
    • 79956053005 scopus 로고    scopus 로고
    • Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures
    • Feorentini V., Bernardini F., and Ambacher O. Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures. Appl. Phys. Lett. 80 (2002) 1204-1206
    • (2002) Appl. Phys. Lett. , vol.80 , pp. 1204-1206
    • Feorentini, V.1    Bernardini, F.2    Ambacher, O.3
  • 16
    • 33846582550 scopus 로고    scopus 로고
    • 1-mN/GaN HEMTs including non-linear macroscopic polarization and parasitic MESFET conduction
    • 1-mN/GaN HEMTs including non-linear macroscopic polarization and parasitic MESFET conduction. Microwave Opt. Technol. Lett. 49 (2007) 382-389
    • (2007) Microwave Opt. Technol. Lett. , vol.49 , pp. 382-389
    • Chattopadhyay, M.K.1    Tokekar, S.2
  • 17
    • 33644601784 scopus 로고    scopus 로고
    • A thermal model for static current characteristics of AlGaN/GAN high electron mobility transistors including self-heating effect
    • Chang Y., Zhang Y., Zhang Y., and Tong K.Y. A thermal model for static current characteristics of AlGaN/GAN high electron mobility transistors including self-heating effect. J. Appl. Phys. 99 (2006) 044501
    • (2006) J. Appl. Phys. , vol.99 , pp. 044501
    • Chang, Y.1    Zhang, Y.2    Zhang, Y.3    Tong, K.Y.4
  • 18
    • 18844413566 scopus 로고    scopus 로고
    • An electron mobility model for wurtzite GaN
    • Schwierz F. An electron mobility model for wurtzite GaN. Solid-State Electron. 49 (2005) 889-895
    • (2005) Solid-State Electron. , vol.49 , pp. 889-895
    • Schwierz, F.1
  • 19
    • 49849106391 scopus 로고    scopus 로고
    • G.E. Bunea, S.T. Dunham, T.D. Moustakas, MRS Internet, J. Nitride Semicond. Res. 4S1 G641 (1999).
    • G.E. Bunea, S.T. Dunham, T.D. Moustakas, MRS Internet, J. Nitride Semicond. Res. 4S1 G641 (1999).
  • 20
    • 0021501347 scopus 로고
    • The effect of high fields on MOS device and circuit performance
    • Sodini C.G., Ko P.K., and Moll J.L. The effect of high fields on MOS device and circuit performance. IEEE Trans. Electron Devices 31 (1984) 1386-1393
    • (1984) IEEE Trans. Electron Devices , vol.31 , pp. 1386-1393
    • Sodini, C.G.1    Ko, P.K.2    Moll, J.L.3
  • 21
    • 49849104450 scopus 로고    scopus 로고
    • J.C. Freeman, Channel temperature model for microwave AlGaNGaN HEMTs on SiC and sapphire MMICs in high power, high efficiency SSPAs, NASA/TM-2004 212900.
    • J.C. Freeman, Channel temperature model for microwave AlGaNGaN HEMTs on SiC and sapphire MMICs in high power, high efficiency SSPAs, NASA/TM-2004 212900.
  • 23
    • 0014533974 scopus 로고
    • Signal and noise properties of gallium arsenic microwave field-effect transistors
    • Grebene A.B., and Gandhi S.K. Signal and noise properties of gallium arsenic microwave field-effect transistors. Solid-State Electron. 12 (1969) 573-589
    • (1969) Solid-State Electron. , vol.12 , pp. 573-589
    • Grebene, A.B.1    Gandhi, S.K.2
  • 26
    • 0036684666 scopus 로고    scopus 로고
    • Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using dc characterization method
    • Kuzmik J., Javorka P., Alam A., Marso M., Heuken M., and Kordos P. Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using dc characterization method. IEEE Trans. Electron Devices 49 (2002) 1496-1498
    • (2002) IEEE Trans. Electron Devices , vol.49 , pp. 1496-1498
    • Kuzmik, J.1    Javorka, P.2    Alam, A.3    Marso, M.4    Heuken, M.5    Kordos, P.6
  • 28
    • 32544456294 scopus 로고    scopus 로고
    • Trap centers and deep defects contribution in current instabilities for AlGaN/GaN HEMTs on silicon and sapphire substrates
    • Sghaier N., Trabelsi M., Yacoubi N., Bluet M., Souifi A., Guillot G., Gaquiere C., and Dejaeger J.C. Trap centers and deep defects contribution in current instabilities for AlGaN/GaN HEMTs on silicon and sapphire substrates. Microwave J. 37 (2007) 363-370
    • (2007) Microwave J. , vol.37 , pp. 363-370
    • Sghaier, N.1    Trabelsi, M.2    Yacoubi, N.3    Bluet, M.4    Souifi, A.5    Guillot, G.6    Gaquiere, C.7    Dejaeger, J.C.8


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.