The effect of interface-roughness and dislocation scattering on low temperature mobility of 2D electron gas in GaN/AlGaN

Semiconductor Science and Technology

Volumn 19, Issue 3, 2004, Pages 427-432

  Zanato, D ^a   Gokden, S ^b   Balkan, N ^a   Ridley, B K ^a   Schaff, W J ^c  

^a UNIVERSITY OF ESSEX   (United Kingdom)

^b BALIKESIR UNIVERSITY   (Turkey)

^c School of Operations Research and Industrial Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC PHONON; ALUMINUM GALLIUM NITRIDE; DISLOCATION SCATTERING; INTERFACE ROUGHNESS; POLAR-OPTICAL PHONON; TWO DIMENSIONAL ELECTRON GAS;

CALCULATIONS; DISLOCATIONS (CRYSTALS); ELECTRON MOBILITY; ELECTRON SCATTERING; GALLIUM NITRIDE; INTERFACES (MATERIALS); PHONONS; SEMICONDUCTING ALUMINUM COMPOUNDS; STATISTICAL METHODS; THERMAL EFFECTS;

ELECTRON GAS;

EID: 1642335549     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/3/024     Document Type: Article

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