AlGaN/GaN HEMTs: Experiment and simulation of DC characteristics

Solid-State Electronics

Volumn 50, Issue 6, 2006, Pages 1051-1056

  Faraclas, Elias W ^a   Anwar, A F M ^a  

^a UNIVERSITY OF CONNECTICUT   (United States)

Author keywords

Experimental I V; GaN HEMT; Modeling; Numerical simulation; Transconductance

Indexed keywords

COMPUTER SIMULATION; COMPUTER SOFTWARE; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; OPTIMIZATION; POLARIZATION; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSCONDUCTANCE;

EXPERIMENTAL I-V; GAN HEMT; MODELING; POLARIZATION CHARGES;

DC MACHINERY;

EID: 33745739288     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.04.014     Document Type: Article

References (20)

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